| 描述 | Transistors Bipolar (BJT) NPN Gen Pur SS | 最大直流电集电极电流 | 0.2 A |
|---|---|---|---|
| 直流集电极/Base Gain hfe Min | 90 | 配置 | Single |
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-92 | 封装 | Box |
| 最小工作温度 | - 65 C | 功率耗散 | 625 mW |
| 工厂包装数量 | 2500 |
【Central Semiconductor】2N3711,Transistors Bipolar (BJT) NPN Gen Pur SS
【Central Semiconductor】2N3713,Transistors Bipolar (BJT) NPN GP Power
【Central Semiconductor】2N3713 LEADFREE,Transistors Bipolar (BJT) NPN GP Power
【Central Semiconductor】2N3714,Transistors Bipolar (BJT) NPN GP Power
【Central Semiconductor】2N3715,Transistors Bipolar (BJT) NPN GP Power