| 描述 | Transistors Bipolar (BJT) | 直流集电极/Base Gain hfe Min | 50 |
|---|---|---|---|
| 配置 | Single | 最大工作温度 | + 150 C |
| 安装风格 | Through Hole | 封装 / 箱体 | TO-92 |
| 集电极连续电流 | 0.2 A | 最小工作温度 | - 55 C |
| 功率耗散 | 625 mW |
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