描述 | Transistors Bipolar (BJT) NPN Transistor General Purpose | 直流集电极/Base Gain hfe Min | 20 at 1 mA at 1 V |
---|---|---|---|
配置 | Single | 最大工作温度 | + 150 C |
安装风格 | Through Hole | 封装 / 箱体 | TO-92 |
封装 | Reel | 集电极连续电流 | 0.6 A |
最小工作温度 | - 55 C | 功率耗散 | 625 mW |
【Central Semiconductor】2N4401,Transistors Bipolar (BJT) NPN Gen Pur SS
【Central Semiconductor】2N4401 LEADFREE,Digital Transistors / Resistor Biased NPN Gen Pur SS
【NXP Semiconductors】2N4401 T/R,Transistors Bipolar (BJT) NPN SW 600MA 40V
【Fairchild Semiconductor】2N4401_D11Z,TRANSISTOR NPN 40V 600MA TO-92
【Fairchild Semiconductor】2N4401_D26Z,Transistors Bipolar (BJT)
【Fairchild Semiconductor】2N4401_D27Z,Transistors Bipolar (BJT)