| 描述 | Transistors Bipolar (BJT) PNP Transistor General Purpose | 直流集电极/Base Gain hfe Min | 30 at 1 mA at 1 V |
|---|---|---|---|
| 配置 | Single | 最大工作温度 | + 150 C |
| 安装风格 | Through Hole | 封装 / 箱体 | TO-92 |
| 封装 | Ammo | 集电极连续电流 | 0.6 A |
| 最小工作温度 | - 55 C | 功率耗散 | 625 mW |
【Fairchild Semiconductor】2N4402TAR,TRANSISTOR PNP 40V 600MA TO-92
【Fairchild Semiconductor】2N4402TF,TRANSISTOR PNP 40V 600MA TO-92
【Fairchild Semiconductor】2N4402TF_Q,Transistors Bipolar (BJT) PNP Transistor General Purpose
【Fairchild Semiconductor】2N4402TFR,TRANSISTOR PNP 40V 600MA TO-92
【Fairchild Semiconductor】2N4402TFR_Q,Transistors Bipolar (BJT) PNP Transistor General Purpose
【Central Semiconductor】2N4403,Transistors Bipolar (BJT) PNP Gen Pur SS
