| 描述 | Transistors Bipolar (BJT) NPN 25V 100mA HFE/12 | 直流集电极/Base Gain hfe Min | 400 at 10 uA at 5 V |
|---|---|---|---|
| 配置 | Single | 最大工作频率 | 50 MHz |
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-92 | 封装 | Ammo |
| 集电极连续电流 | 0.1 A | 最小工作温度 | - 55 C |
| 功率耗散 | 625 mW |
【Fairchild Semiconductor】2N5089TAR,TRANSISTOR NPN 25V 100MA TO-92
【Fairchild Semiconductor】2N5089TAR_Q,Transistors Bipolar (BJT) NPN Transistor General Purpose
【Fairchild Semiconductor】2N5089TF,TRANSISTOR NPN 25V 100MA TO-92
【Fairchild Semiconductor】2N5089TFR,TRANSISTOR NPN 25V 100MA TO-92
【Fairchild Semiconductor】2N5089TFR_Q,Transistors Bipolar (BJT) NPN Transistor General Purpose
