| 描述 | Transistors Bipolar (BJT) NPN Transistor General Purpose | 直流集电极/Base Gain hfe Min | 200 at 100 uA at 5 V |
|---|---|---|---|
| 配置 | Single | 最大工作频率 | 30 MHz |
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-92 | 封装 | Reel |
| 集电极连续电流 | 0.1 A | 最小工作温度 | - 55 C |
| 功率耗散 | 625 mW |
【Central Semiconductor】2N5225,Transistors Bipolar (BJT) NPN Gen Pur SS
【Central Semiconductor】2N5226,Transistors Bipolar (BJT) PNP Gen Pur SS
【Central Semiconductor】2N5226 LEADFREE,Transistors Bipolar (BJT) PNP Gen Pur SS sistors
【Central Semiconductor】2N5232A,Transistors Bipolar (BJT) NPN Gen Pur SS
【Central Semiconductor】2N5232A LEADFREE,双极小信号 NPN Gen Pur SS
