描述 | Transistors Bipolar (BJT) | 配置 | Single |
---|---|---|---|
最大工作频率 | 300 MHz | 最大工作温度 | + 150 C |
安装风格 | Through Hole | 封装 / 箱体 | TO-92 |
最小工作温度 | - 55 C | 功率耗散 | 625 mW |
【Fairchild Semiconductor】2N5551_D11Z,Transistors Bipolar (BJT)
【Fairchild Semiconductor】2N5551_D26Z,Transistors Bipolar (BJT)
【Fairchild Semiconductor】2N5551_D27Z,Transistors Bipolar (BJT)
【Fairchild Semiconductor】2N5551_D74Z,Transistors Bipolar (BJT)
【Fairchild Semiconductor】2N5551_D75Z,Transistors Bipolar (BJT)
【Fairchild Semiconductor】2N5551_J05Z,AMP GP NPN 160V 600MA TO-92
【Fairchild Semiconductor】2N5551_J05Z_Q,Transistors Bipolar (BJT) NPN Transistor General Purpose
【Fairchild Semiconductor】2N5551_J18Z,AMP GP NPN 160V 600MA TO-92