| 描述 | Transistors Bipolar (BJT) NPN Transistor General Purpose | 直流集电极/Base Gain hfe Min | 80 at 1 mA at 5 V |
|---|---|---|---|
| 配置 | Single | 最大工作频率 | 300 MHz |
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-92 | 封装 | Ammo |
| 集电极连续电流 | 0.6 A | 最小工作温度 | - 55 C |
| 功率耗散 | 625 mW |
【Fairchild Semiconductor】2N5551TF,AMP GP NPN 160V 600MA TO-92
【Fairchild Semiconductor】2N5551TFR,AMP GP NPN 160V 600MA TO-92
【Fairchild Semiconductor】2N5551TFR_Q,Transistors Bipolar (BJT) NPN Transistor General Purpose
【Fairchild Semiconductor】2N5551YBU,AMP GP NPN 160V 600MA TO-92
【Fairchild Semiconductor】2N5551YTA,AMP GP NPN 160V 600MA TO-92
【ON Semiconductor】2N5551ZL1G,TRANS NPN SS GP 0.6A 160V TO-92