| 描述 | Transistors Bipolar (BJT) PNP General Purpose | 直流集电极/Base Gain hfe Min | 110 at 100 uA at 1 V |
|---|---|---|---|
| 配置 | Single | 最大工作频率 | 50 MHz |
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-39 | 封装 | Bulk |
| 功率耗散 | 650 mW | 工厂包装数量 | 500 |
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【STMicroelectronics】BC161-16,Transistors Bipolar (BJT) PNP General Purpose
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