描述 | Transistors Bipolar (BJT) NPN Si Transistor Epitaxial | 直流集电极/Base Gain hfe Min | 25 at 5 mA at 2 V |
---|---|---|---|
配置 | Single | 最大工作频率 | 100 MHz |
最大工作温度 | + 150 C | 安装风格 | Through Hole |
封装 / 箱体 | TO-92 | 封装 | Ammo |
集电极连续电流 | 1 A | 最小工作温度 | - 65 C |
功率耗散 | 1 W |
【Fairchild Semiconductor】BC635_J35Z,TRANS NPN EPTXL 45V 100MA TO-92
【Fairchild Semiconductor】BC635_L34Z,TRANSISTOR NPN 45V 1A TO-92
【Fairchild Semiconductor】BC635_Q,Transistors Bipolar (BJT) TO-92 NPN GP AMP
【NXP Semiconductors】BC635-16,126,TRANSISTOR NPN 45V 1A TO-92
【Fairchild Semiconductor】BC635BU,Transistors Bipolar (BJT) TO-92 NPN GP AMP
【Fairchild Semiconductor】BC635TA,Transistors Bipolar (BJT) TO-92 NPN GP AMP