| 描述 | Transistors Bipolar (BJT) | 直流集电极/Base Gain hfe Min | 25 at 5 mA at 2 V |
|---|---|---|---|
| 配置 | Single | 最大工作频率 | 100 MHz |
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-92 | 封装 | Bulk |
| 最小工作温度 | - 65 C | 功率耗散 | 1000 mW |
【Fairchild Semiconductor】BC639_D26Z,TRANSISTOR NPN 80V 1A TO-92
【Fairchild Semiconductor】BC639_D27Z,TRANSISTOR NPN 80V 1A TO-92
【Fairchild Semiconductor】BC639_D74Z,TRANSISTOR NPN 80V 1A TO-92
【Fairchild Semiconductor】BC639_D75Z,TRANSISTOR NPN 80V 1A TO-92
【Fairchild Semiconductor】BC639_D81Z,TRANSISTOR NPN 80V 1A TO-92
【Fairchild Semiconductor】BC639_J35Z,TRANS NPN EPTXL 80V 100MA TO-92
【Fairchild Semiconductor】BC639_L34Z,TRANSISTOR NPN 80V 1A TO-92
【Fairchild Semiconductor】BC639_Q,Transistors Bipolar (BJT) TO-92 NPN GP AMP