| 描述 | Transistors Bipolar (BJT) 30W NPN Silicon | 最大直流电集电极电流 | 2 A |
|---|---|---|---|
| 直流集电极/Base Gain hfe Min | 40 | 配置 | Single |
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-220 | 最小工作温度 | - 65 C |
| 功率耗散 | 30000 mW | 工厂包装数量 | 50 |
【Bourns】BD239A-S,Transistors Switching (Resistor Biased) 60V 2A NPN
【Fairchild Semiconductor】BD239ATU,TRANSISTOR NPN 60V 2A TO-220
【Bourns】BD239B-S,Transistors Switching (Resistor Biased) 80V 2A NPN
【Fairchild Semiconductor】BD239BTU,TRANSISTOR NPN 80V 2A TO-220
【Fairchild Semiconductor】BD239BTU_Q,Transistors Bipolar (BJT)
【Fairchild Semiconductor】BD239C,TRANSISTOR NPN 100V 2A TO-220
【Bourns】BD239C-S,Transistors Switching (Resistor Biased) 100V 2A NPN