| 描述 | Transistors Bipolar (BJT) 40W NPN Silicon | 最大直流电集电极电流 | 3 A |
|---|---|---|---|
| 直流集电极/Base Gain hfe Min | 25 | 最大工作温度 | + 150 C |
| 安装风格 | Through Hole | 封装 / 箱体 | TO-220 |
| 最小工作温度 | - 65 C | 功率耗散 | 40000 mW |
| 工厂包装数量 | 50 |
【Bourns】BD241B-S,Transistors Switching (Resistor Biased) 80V 3A NPN
【Fairchild Semiconductor】BD241BTU,TRANSISTOR NPN 80V 3A TO-220
【Bourns】BD241C-S,Transistors Switching (Resistor Biased) 100V 3A NPN
【Fairchild Semiconductor】BD241CTU,TRANSISTOR NPN 100V 3A TO-220
【Bourns】BD241D-S,Transistors Switching (Resistor Biased) 120V 3A NPN