描述 | DIODE ZENER 12V 500MW DO-35 | 电压 - 在 If 时为正向 (Vf)(最大) | 1.5V @ 100mA |
---|---|---|---|
电流 - 在 Vr 时反向漏电 | 100nA @ 8V | 容差 | ±5% |
功率 - 最大 | 500mW | 阻抗(最大)(Zzt) | 25 欧姆 |
安装类型 | 通孔 | 封装/外壳 | DO-204AH,DO-35,轴向 |
供应商设备封装 | DO-35 | 包装 | 散装 |
工作温度 | -65°C ~ 200°C |
x79c8v2 8.2 5 500 bzx79a5v6 5.6 5 400 bzx79c9v1 9.1 5 500 bzx79a6v2 6.2 5 400 bzx79c10 10 5 500 bzx79a6v8 6.8 5 400 bzx79c11 11 5 500 bzx79a7v5 7.5 5 400 bzx79c12 12 5 500 bzx79a8v2 8.2 5 400 bzx79c13 13 5 500 ...
x79c8v2 8.2 5 500 bzx79a5v6 5.6 5 400 bzx79c9v1 9.1 5 500 bzx79a6v2 6.2 5 400 bzx79c10 10 5 500 bzx79a6v8 6.8 5 400 bzx79c11 11 5 500 bzx79a7v5 7.5 5 400 bzx79c12 12 5 500 bzx79a8v2 8.2 5 400 bzx79c13 13 5 500 来源:xiangxueqin ...
4v3 4.3 5 400 bzx79c6v8 6.8 5 500 bzx79a4v7 4.7 5 400 bzx79c7v5 7.5 5 500 bzx79a5v1 5.1 5 400 bzx79c8v2 8.2 5 500 bzx79a5v6 5.6 5 400 bzx79c9v1 9.1 5 500 bzx79a6v2 6.2 5 400 bzx79c10 10 5 500 bzx79a6v8 6.8 5 400 bzx79c11 11 5 500 bzx79a7v5 7.5 5 400 bzx79c12 12 5 500 bzx79a8v2 8.2 5 400 bzx79c13 13 5 500 ...
【NXP Semiconductors】BZX79-C12,113,DIODE ZENER 12V 500MW DO-35
【NXP Semiconductors】BZX79-C12,133,DIODE ZENER 12V 500MW DO-35
【NXP Semiconductors】BZX79-C12,143,DIODE VREG 12V 500MW DO-35
【Fairchild Semiconductor】BZX79C12_T50A,DIODE ZENER 12V 500MW DO-35
【Fairchild Semiconductor】BZX79C12_T50R,DIODE ZENER 12V 500MW DO-35