| 描述 | 双极小信号 Dual - NPN/NPN Enhanced | 封装 / 箱体 | SOT-563 |
|---|---|---|---|
| 集电极—发射极最大电压 VCEO | 50 V | 发射极 - 基极电压 VEBO | 5 V |
| 集电极连续电流 | 0.45 A | 最大直流电集电极电流 | 0.1 A |
| 功率耗散 | 350 mW | 最大工作频率 | 100 MHz |
| 最大工作温度 | + 150 C | 封装 | Reel |
| DC Collector/Base Gain hfe Min | 300 at 0.1 mA at 5 V | 最小工作温度 | - 65 C |
| Standard Pack Qty | 3000.0 |
【Central Semiconductor】CMLT5551,Transistors Bipolar (BJT) Dual NPN Small Sgnl High Voltage
【Central Semiconductor】CMLT5551HC,Transistors Bipolar (BJT) Small Signal NPN Hi Volt
【Central Semiconductor】CMLT5551HC LEADFREE,双极电源 Small Signal Dual NPN Hi Volt
【Central Semiconductor】CMLT6427E,Transistors Bipolar (BJT) SMD Small Signal Transistor NPN
【Central Semiconductor】CMLT6427E LEADFREE,双极小信号 SMD Small Signal Transistor NPN