| 描述 | Transistors Bipolar (BJT) | 最大直流电集电极电流 | 0.1 A |
|---|---|---|---|
| 直流集电极/Base Gain hfe Min | 300 at 0.1 mA at 5 V | 配置 | Single |
| 最大工作频率 | 100 MHz | 最大工作温度 | + 150 C |
| 安装风格 | SMD/SMT | 封装 / 箱体 | SOT-23 |
| 封装 | Box | 最小工作温度 | - 65 C |
| 功率耗散 | 350 mW | 工厂包装数量 | 3000 |
【Central Semiconductor】CMPT5088,Transistors Bipolar (BJT) NPN GP
【Central Semiconductor】CMPT5088-T&R 3000 PCS,Transistors Bipolar (BJT) NPN GP
【Central Semiconductor】CMPT5089 LEADFREE,Transistors Bipolar (BJT) NPN Gen Purpose
【Central Semiconductor】CMPT5089 T&R 3000 PCS,Transistors Bipolar (BJT) NPN Gen Purpose
【Central Semiconductor】CMPT5179,Transistors Bipolar (BJT) NPN RF Oscillator