| 描述 | Transistors Switching (Resistor Biased) DUAL PNP/DTR | 典型电阻器比率 | 1 at NPN |
|---|---|---|---|
| 安装风格 | SMD/SMT | 封装 / 箱体 | EMT-6 |
| 集电极—发射极最大电压 VCEO | 50 V at PNP | 峰值直流集电极电流 | 100 mA at NPN, 150 mA at PNP |
| 最大工作温度 | + 150 C | 封装 | Reel |
| 最小工作温度 | - 55 C | 工厂包装数量 | 8000 |
【ON Semiconductor】EMF18XV6T5,Transistors Switching (Resistor Biased) Dual Complementary
【ON Semiconductor】EMF18XV6T5G,TRANS BRT NPN/PNP DL 50V SOT-563
【ROHM Semiconductor】EMF19T2R,Transistors Switching (Resistor Biased) DUAL NPN/DTR
【ROHM Semiconductor】EMF20T2R,Transistors Bipolar (BJT) DUAL NPN/DTR
