| 描述 | Transistors Bipolar (BJT) PNP Si Transistor Epitaxial | 直流集电极/Base Gain hfe Min | 90 |
|---|---|---|---|
| 配置 | Single | 最大工作频率 | 30 MHz |
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-3P | 封装 | Tube |
| 最小工作温度 | - 55 C | 功率耗散 | 100000 mW |
【Fairchild Semiconductor】FJA4213OTU,TRANS PNP 250V 17A TO-3PN
【Fairchild Semiconductor】FJA4213RTU,TRANS PNP 250V 17A TO-3PN
【Fairchild Semiconductor】FJA4310OTU,TRANSISTOR NPN 140V 10A TO-3P
【Fairchild Semiconductor】FJA4310RTU,Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
【Fairchild Semiconductor】FJA4310YTU,Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
【Fairchild Semiconductor】FJA4313OTU,TRANS NPN 250V 17A TO-3P
【Fairchild Semiconductor】FJA4313RTU,TRANS NPN 250V 17A TO-3P
【Fairchild Semiconductor】FJAF4210OTU,TRANSISTOR PNP 140V 10A TO-3PF