| 描述 | Transistors Switching (Resistor Biased) 50V/100mA/22K 22K | 安装风格 | Through Hole |
|---|---|---|---|
| 封装 / 箱体 | TO-92-3 | 集电极—发射极最大电压 VCEO | 50 V |
| 集电极连续电流 | 0.1 A | 峰值直流集电极电流 | 100 mA |
| 功率耗散 | 0.3 W | 最大工作温度 | + 150 C |
| 封装 | Bulk | 发射极 - 基极电压 VEBO | 10 V |
| 最小工作温度 | - 55 C |
【Fairchild Semiconductor】FJN3303RTA,TRANSISTOR NPN 50V 100MA TO-92
【Fairchild Semiconductor】FJN3303TA,TRANSISTOR NPN 400V 1.5A TO-92
【Fairchild Semiconductor】FJN3304RBU,TRANSISTOR NPN 50V 100MA TO-92
【Fairchild Semiconductor】FJN3304RBU_Q,Transistors Switching (Resistor Biased) 50V/100mA/47K 47K
【Fairchild Semiconductor】FJN3304RTA,TRANSISTOR NPN 50V 100MA TO-92
【Fairchild Semiconductor】FJN3305RBU,TRANSISTOR NPN 50V 100MA TO-92
【Fairchild Semiconductor】FJN3305RBU_Q,Transistors Switching (Resistor Biased) 50V/100mA/4.7K 10K
【Fairchild Semiconductor】FJN3305RTA,TRANSISTOR NPN 50V 100MA TO-92