| 描述 | Transistors Bipolar (BJT) NPN Si Transistor Epitaxial | 最大直流电集电极电流 | 5 A |
|---|---|---|---|
| 直流集电极/Base Gain hfe Min | 230 | 配置 | Single |
| 最大工作频率 | 150 MHz | 最大工作温度 | + 150 C |
| 安装风格 | Through Hole | 封装 / 箱体 | TO-92 |
| 封装 | Ammo | 集电极连续电流 | 5 A |
| 最小工作温度 | - 55 C | 功率耗散 | 0.75 W |
【Fairchild Semiconductor】FJNS3201RBU,TRANSISTOR NPN 50V 100MA TO-92S
【Fairchild Semiconductor】FJNS3201RBU_Q,Transistors Switching (Resistor Biased) 50V/100mA/4.7K 4.7K
【Fairchild Semiconductor】FJNS3201RTA,TRANSISTOR NPN 50V 100MA TO-92S
【Fairchild Semiconductor】FJNS3202RBU,TRANSISTOR NPN 50V 100MA TO-92S
【Fairchild Semiconductor】FJNS3202RBU_Q,Transistors Switching (Resistor Biased) 50V/100mA/10K 10K
【Fairchild Semiconductor】FJNS3202RTA,TRANSISTOR NPN 50V 100MA TO-92S
【Fairchild Semiconductor】FJNS3203RBU,TRANSISTOR NPN 50V 100MA TO-92S
【Fairchild Semiconductor】FJNS3203RBU_Q,Transistors Switching (Resistor Biased) 50V/100mA/22K 22K