描述 | Transistors Bipolar (BJT) | 直流集电极/Base Gain hfe Min | 160 at 4 A at 2 V |
---|---|---|---|
配置 | Single | 最大工作频率 | 180 MHz |
最大工作温度 | + 150 C | 安装风格 | Through Hole |
封装 / 箱体 | IPAK | 封装 | Rail |
最小工作温度 | - 55 C | 功率耗散 | 1000 mW |
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