描述 | IC FET N-CH SI 20V 100MW SOT623F | 漏极至源极电压(Vdss) | - |
---|---|---|---|
漏极电流 (Id) - 最大 | 1mA | FET 型 | N 沟道 |
电压 - 击穿 (V(BR)GSS) | 20V | 电压 - 切断 (VGS 关)@ Id | 600mV @ 1?A |
输入电容 (Ciss) @ Vds | 3.5pF @ 5V | 电阻 - RDS(开) | - |
安装类型 | 表面贴装 | 包装 | 带卷 (TR) |
封装/外壳 | SOT-623F | 供应商设备封装 | SOT-623F |
功率 - 最大 | 100mW |
【Fairchild Semiconductor】FJZ594JTF_Q,JFET Si N-Ch Junction FET
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【Fairchild Semiconductor】FJZ733LTF,TRANSISTOR PNP 50V 150MA SOT623F
【Fairchild Semiconductor】FJZ733LTF_Q,Transistors Bipolar (BJT) PNP/50V/150mA
【Fairchild Semiconductor】FJZ733OTF,TRANSISTOR PNP 50V 150MA SOT623F
【Fairchild Semiconductor】FJZ733RTF,TRANSISTOR PNP 50V 150MA SOT623F
【Fairchild Semiconductor】FJZ733RTF_Q,Transistors Bipolar (BJT) PNP Si Transistor Epitaxial