| 描述 | MOSFET N-Ch LL UltraFET PWM Optimized | 漏极连续电流 | 50 A |
|---|---|---|---|
| 电阻汲极/源极 RDS（导通） | 0.0115 Ohms | 配置 | Single |
| 安装风格 | SMD/SMT | 封装 / 箱体 | TO-252AA |
| 封装 | Reel | 下降时间 | 40 ns, 35 ns |
| 功率耗散 | 100 W | 上升时间 | 70 ns, 45 ns |
| 工厂包装数量 | 2500 | 典型关闭延迟时间 | 40 ns, 60 ns |
【Fairchild Semiconductor】ISL9N307AP3,MOSFET N-Ch LL UltraFET PWM Optimized
【Fairchild Semiconductor】ISL9N307AS3ST,MOSFET N-Ch LL UltraFET PWM Optimized
【Fairchild Semiconductor】ISL9N308AD3,MOSFET N-Ch UltraFET Trench Logic Level
【Fairchild Semiconductor】ISL9N308AD3ST,MOSFET N-Ch UltraFET Trench Logic Level
【Fairchild Semiconductor】ISL9N308AP3,MOSFET N-Ch Trench MOSFET Logic Level
【Fairchild Semiconductor】ISL9N308AS3ST,MOSFET N-Ch UltraFET Trench Logic Level
【Fairchild Semiconductor】ISL9N310AD3,MOSFET N-Ch LL UltraFET PWM Optimized
【Fairchild Semiconductor】ISL9N310AD3ST,MOSFET N-Ch LL UltraFET PWM Optimized