| 描述 | Transistors Bipolar (BJT) PNP Epitaxial Transistor | 直流集电极/Base Gain hfe Min | 70 at 100 mA at 1 V |
|---|---|---|---|
| 配置 | Single | 最大工作温度 | + 150 C |
| 安装风格 | Through Hole | 封装 / 箱体 | TO-126 |
| 封装 | Ammo | 集电极连续电流 | - 0.5 A |
| 最小工作温度 | - 55 C | 功率耗散 | 300 mW |
【Fairchild Semiconductor】KSA1150YBU,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSA1150YTA,TRANSISTOR PNP 20V 0.5A TO-92S
【Fairchild Semiconductor】KSA1150YTA_Q,Transistors Bipolar (BJT) PNP Epitaxial Transistor
【Fairchild Semiconductor】KSA1156OS,TRANSISTOR PNP 400V 0.5A TO-126
【Fairchild Semiconductor】KSA1156OSTSTU,TRANSISTOR PNP 400V 0.5A TO-126
【Fairchild Semiconductor】KSA1156OSTU,TRANSISTOR PNP 400V 0.5A TO-126
【Fairchild Semiconductor】KSA1156YS,TRANSISTOR PNP 400V 0.5A TO-126
【Fairchild Semiconductor】KSA1156YSTSTU,TRANSISTOR PNP 400V 0.5A TO-126