| 描述 | Transistors Bipolar (BJT) PNP Epitaxial Transistor | 直流集电极/Base Gain hfe Min | 120 at 100 mA at 1 V |
|---|---|---|---|
| 配置 | Single | 最大工作频率 | 110 MHz |
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-92 | 封装 | Ammo |
| 集电极连续电流 | - 1 A | 最小工作温度 | - 55 C |
| 功率耗散 | 0.8 W |
【Fairchild Semiconductor】KSB564AGBU,TRANSISTOR PNP 25V 1A TO-92
【Fairchild Semiconductor】KSB564AGTA,TRANSISTOR PNP 25V 1A TO-92
【Fairchild Semiconductor】KSB564AGTA_Q,Transistors Bipolar (BJT) PNP Epitaxial Transistor
【Fairchild Semiconductor】KSB564AOBU,TRANSISTOR PNP 25V 1A TO-92
【Fairchild Semiconductor】KSB564AOTA,TRANSISTOR PNP 25V 1A TO-92
【Fairchild Semiconductor】KSB564AOTA_Q,Transistors Bipolar (BJT) PNP Epitaxial Transistor
【Fairchild Semiconductor】KSB564AYBU,TRANSISTOR PNP 25V 1A TO-92
【Fairchild Semiconductor】KSB564AYTA,TRANSISTOR PNP 25V 1A TO-92