| 描述 | Transistors Bipolar (BJT) NPN Epitaxial Transistor | 直流集电极/Base Gain hfe Min | 120 at 50 mA at 2 V |
|---|---|---|---|
| 配置 | Single | 最大工作频率 | 50 MHz |
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-92 | 封装 | Ammo |
| 集电极连续电流 | 0.7 A | 最小工作温度 | - 55 C |
| 功率耗散 | 0.8 W |
【Fairchild Semiconductor】KSC1008GBU,TRANSISTOR NPN 60V 700MA TO-92
【Fairchild Semiconductor】KSC1008GTA,TRANSISTOR NPN 60V 700MA TO-92
【Fairchild Semiconductor】KSC1008GTA_Q,Transistors Bipolar (BJT) NPN Epitaxial Transistor
【Fairchild Semiconductor】KSC1008OBU,TRANSISTOR NPN 60V 700MA TO-92
【Fairchild Semiconductor】KSC1008OTA,TRANSISTOR NPN 60V 700MA TO-92
【Fairchild Semiconductor】KSC1008OTA_Q,Transistors Bipolar (BJT) NPN Epitaxial Transistor
【Fairchild Semiconductor】KSC1008RBU,TRANSISTOR NPN 60V 700MA TO-92
【Fairchild Semiconductor】KSC1008RTA,TRANSISTOR NPN 60V 700MA TO-92