| 描述 | Transistors Bipolar (BJT) NPN Si Transistor Epitaxial | 直流集电极/Base Gain hfe Min | 70 at 2 mA at 10 V |
|---|---|---|---|
| 配置 | Single | 最大工作频率 | 700 MHz |
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-92 | 封装 | Bulk |
| 集电极连续电流 | 0.03 A | 最小工作温度 | - 55 C |
| 功率耗散 | 250 mW |
【Fairchild Semiconductor】KSC1187OTA,TRANSISTOR NPN 20V 30MA TO-92
【Fairchild Semiconductor】KSC1187OTA_Q,Transistors Bipolar (BJT) NPN Epitaxial Transistor
【Fairchild Semiconductor】KSC1187YBU,TRANSISTOR NPN 20V 30MA TO-92
【Fairchild Semiconductor】KSC1187YTA,TRANSISTOR NPN 20V 30MA TO-92
【Fairchild Semiconductor】KSC1187YTA_Q,Transistors Bipolar (BJT) NPN Epitaxial Transistor
