描述 | Transistors Bipolar (BJT) NPN Epitaxial Transistor | 最大直流电集电极电流 | 0.02 A |
---|---|---|---|
直流集电极/Base Gain hfe Min | 40 | 配置 | Single |
最大工作频率 | 600 MHz | 最大工作温度 | + 150 C |
安装风格 | Through Hole | 封装 / 箱体 | TO-92 |
封装 | Ammo | 集电极连续电流 | 0.02 A |
功率耗散 | 250 mW |
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