| 描述 | Transistors Bipolar (BJT) NPN Epitaxial Transistor | 直流集电极/Base Gain hfe Min | 80 at 100 mA at 5 V |
|---|---|---|---|
| 配置 | Single | 最大工作频率 | 120 MHz |
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-92L | 封装 | Ammo |
| 集电极连续电流 | 0.8 A | 最小工作温度 | - 55 C |
| 功率耗散 | 0.9 W |
【Fairchild Semiconductor】KSC2316YBU,TRANSISTOR NPN 120V 800MA TO-92L
【Fairchild Semiconductor】KSC2316YTA,TRANSISTOR NPN 120V 800MA TO-92L
【Fairchild Semiconductor】KSC2316YTA_Q,Transistors Bipolar (BJT) NPN Epitaxial Transistor
【Fairchild Semiconductor】KSC2328AOBU,TRANSISTOR NPN 30V 2A TO-92L
【Fairchild Semiconductor】KSC2328AOTA,TRANSISTOR NPN 30V 2A TO-92L
【Fairchild Semiconductor】KSC2328AOTA_Q,Transistors Bipolar (BJT) NPN Epitaxial Transistor
【Fairchild Semiconductor】KSC2328AYBU,TRANSISTOR NPN 30V 2A TO-92L
【Fairchild Semiconductor】KSC2328AYSHBU,Transistors Bipolar (BJT) NPN Si Transistor Epitaxial