| 描述 | Transistors Bipolar (BJT) NPN Epitaxial Transistor | 直流集电极/Base Gain hfe Min | 70 at 20 mA at 10 V |
|---|---|---|---|
| 配置 | Single | 最大工作频率 | 50 MHz |
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-92L | 封装 | Ammo |
| 最小工作温度 | - 55 C | 功率耗散 | 1 W |
【Fairchild Semiconductor】KSC2330RBU,TRANSISTOR NPN 300V 100MA TO-92L
【Fairchild Semiconductor】KSC2330RTA,TRANSISTOR NPN 300V 100MA TO-92L
【Fairchild Semiconductor】KSC2330RTA_Q,Transistors Bipolar (BJT) NPN Epitaxial Transistor
【Fairchild Semiconductor】KSC2330YBU,TRANSISTOR NPN 300V 100MA TO-92L
【Fairchild Semiconductor】KSC2330YH2TA,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSC2330YNBU,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSC2330YTA,TRANSISTOR NPN 300V 100MA TO-92L
【Fairchild Semiconductor】KSC2330YTA_Q,Transistors Bipolar (BJT) NPN Epitaxial Transistor