| 描述 | Transistors Bipolar (BJT) | 直流集电极/Base Gain hfe Min | 30 |
|---|---|---|---|
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-220F | 功率耗散 | 40000 mW |
【Fairchild Semiconductor】KSC2335FOTU,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSC2335FRTU,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSC2335FYTU,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSC2335OTU,TRANSISTOR NPN 400V 7A TO-220
【Fairchild Semiconductor】KSC2335R,TRANSISTOR NPN 400V 7A TO-220
【Fairchild Semiconductor】KSC2335RTU,TRANSISTOR NPN 400V 7A TO-220
【Fairchild Semiconductor】KSC2335Y,TRANSISTOR NPN 400V 7A TO-220