| 描述 | Transistors Bipolar (BJT) NPN Epitaxial Transistor | 直流集电极/Base Gain hfe Min | 120 at 2 mA at 12 V |
|---|---|---|---|
| 配置 | Single | 最大工作频率 | 250 MHz |
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-92S | 封装 | Ammo |
| 最小工作温度 | - 55 C | 功率耗散 | 200 mW |
【Fairchild Semiconductor】KSC2682OS,TRANSISTOR NPN 180V 100MA TO-126
【Fairchild Semiconductor】KSC2682OSTU,TRANSISTOR NPN 180V 100MA TO-126
【Fairchild Semiconductor】KSC2682YS,TRANSISTOR NPN 180V 100MA TO-126
【Fairchild Semiconductor】KSC2682YSTU,TRANSISTOR NPN 180V 100MA TO-126
【Fairchild Semiconductor】KSC2688OS,TRANSISTOR NPN 300V 200MA TO-126
【Fairchild Semiconductor】KSC2688OSTU,TRANSISTOR NPN 300V 200MA TO-126
【Fairchild Semiconductor】KSC2688YS,TRANSISTOR NPN 300V 200MA TO-126
【Fairchild Semiconductor】KSC2688YSTSSTU,TRANSISTOR NPN 300V 200MA TO-126