| 描述 | Transistors Bipolar (BJT) NPN Epitaxial Transistor | 直流集电极/Base Gain hfe Min | 200 at 1 mA at 6 V |
|---|---|---|---|
| 配置 | Single | 最大工作频率 | 300 MHz |
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-92S | 封装 | Ammo |
| 集电极连续电流 | 0.15 A | 最小工作温度 | - 55 C |
| 功率耗散 | 250 mW |
【Fairchild Semiconductor】KSC2785LTA,TRANSISTOR NPN 50V 150MA TO-92S
【Fairchild Semiconductor】KSC2785LTA_Q,Transistors Bipolar (BJT) NPN Epitaxial Transistor
【Fairchild Semiconductor】KSC2785OBU,TRANSISTOR NPN 50V 150MA TO-92S
【Fairchild Semiconductor】KSC2785OTA,TRANSISTOR NPN 50V 150MA TO-92S
【Fairchild Semiconductor】KSC2785OTA_Q,Transistors Bipolar (BJT) NPN Epitaxial Transistor
【Fairchild Semiconductor】KSC2785YBU,TRANSISTOR NPN 50V 150MA TO-92S
【Fairchild Semiconductor】KSC2785YTA,TRANSISTOR NPN 50V 150MA TO-92S
【Fairchild Semiconductor】KSC2785YTA_Q,Transistors Bipolar (BJT) NPN Epitaxial Transistor