| 描述 | Transistors Bipolar (BJT) TO-126 | 直流集电极/Base Gain hfe Min | 20 |
|---|---|---|---|
| 最大工作频率 | 15 MHz | 最大工作温度 | + 150 C |
| 安装风格 | Through Hole | 封装 / 箱体 | TO-126 |
| 封装 | Rail | 功率耗散 | 20000 mW |
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