| 描述 | Transistors Bipolar (BJT) | 直流集电极/Base Gain hfe Min | 8 |
|---|---|---|---|
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-3PF | 封装 | Rail |
| 功率耗散 | 60000 mW |
【Fairchild Semiconductor】KSC5030OTU,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSC5030RTU,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSC5039FTU,TRANSISTOR NPN 400V 5A TO-220F
【Fairchild Semiconductor】KSC5039H1,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSC5039H1TU,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSC5039H2,TRANSISTOR NPN 400V 5A TO-220
【Fairchild Semiconductor】KSC5039H2TU,Transistors Bipolar (BJT)