| 描述 | Transistors Bipolar (BJT) | 直流集电极/Base Gain hfe Min | 20 |
|---|---|---|---|
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-126 | 封装 | Rail |
| 功率耗散 | 25000 mW |
【Fairchild Semiconductor】KSC5302DMTU,Transistors Bipolar (BJT) DISC BY MFG 2/02
【Fairchild Semiconductor】KSC5302DTU,TRANSISTOR NPN 400V 2A TO-220
【Fairchild Semiconductor】KSC5305DFTTU,TRANSISTOR NPN 400V 5A TO-220
【Fairchild Semiconductor】KSC5305DTU,IC POWER SWITCH HS HV TO-220
【Fairchild Semiconductor】KSC5321ATU,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSC5321FTU,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSC5321TU,Transistors Bipolar (BJT)