描述 | Transistors Bipolar (BJT) NPN Epitaxial Transistor | 直流集电极/Base Gain hfe Min | 120 at 50 mA at 1 V |
---|---|---|---|
配置 | Single | 最大工作频率 | 200 MHz |
最大工作温度 | + 150 C | 安装风格 | Through Hole |
封装 / 箱体 | TO-92 | 封装 | Ammo |
集电极连续电流 | 0.2 A | 最小工作温度 | - 55 C |
功率耗散 | 0.4 W |
【Fairchild Semiconductor】KSC815OBU,TRANSISTOR NPN 45V 200MA TO-92
【Fairchild Semiconductor】KSC815OTA,TRANSISTOR NPN 45V 200MA TO-92
【Fairchild Semiconductor】KSC815OTA_Q,Transistors Bipolar (BJT) NPN Epitaxial Transistor
【Fairchild Semiconductor】KSC815YBU,TRANSISTOR NPN 45V 200MA TO-92
【Fairchild Semiconductor】KSC815YTA,TRANSISTOR NPN 45V 200MA TO-92
【Fairchild Semiconductor】KSC815YTA_Q,Transistors Bipolar (BJT) NPN Epitaxial Transistor
【Fairchild Semiconductor】KSC815YTAM,Transistors Bipolar (BJT) DISC BY MFG 7/02