| 描述 | Transistors Bipolar (BJT) NPN Epitaxial Transistor | 直流集电极/Base Gain hfe Min | 120 at 2 mA at 12 V |
|---|---|---|---|
| 配置 | Single | 最大工作频率 | 250 MHz |
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-92 | 封装 | Ammo |
| 集电极连续电流 | 0.03 A | 最小工作温度 | - 55 C |
| 功率耗散 | 250 mW |
【Fairchild Semiconductor】KSC838OBU,TRANSISTOR NPN 30V 30MA TO-92
【Fairchild Semiconductor】KSC838OBU_Q,Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
【Fairchild Semiconductor】KSC838OTA,TRANSISTOR NPN 30V 30MA TO-92
【Fairchild Semiconductor】KSC838OTA_Q,Transistors Bipolar (BJT) NPN Epitaxial Transistor
【Fairchild Semiconductor】KSC838YBU,TRANSISTOR NPN 30V 30MA TO-92
【Fairchild Semiconductor】KSC838YTA,TRANSISTOR NPN 30V 30MA TO-92
【Fairchild Semiconductor】KSC838YTA_Q,Transistors Bipolar (BJT) NPN Epitaxial Transistor
【Fairchild Semiconductor】KSC839CYTA,TRANSISTOR NPN 30V 100MA TO-92