| 描述 | Transistors Bipolar (BJT) NPN Epitaxial Transistor | 直流集电极/Base Gain hfe Min | 120 at 2 mA at 12 V |
|---|---|---|---|
| 配置 | Single | 最大工作频率 | 250 MHz |
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-92 | 封装 | Bulk |
| 最小工作温度 | - 55 C | 功率耗散 | 250 mW |
【Fairchild Semiconductor】KSC900CGTA,TRANSISTOR NPN 25V 50MA TO-92
【Fairchild Semiconductor】KSC900CGTA_Q,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSC900CYTA,TRANSISTOR NPN 25V 50MA TO-92
【Fairchild Semiconductor】KSC900GTA,TRANSISTOR NPN 25V 50MA TO-92
【Fairchild Semiconductor】KSC900GTA_Q,Transistors Bipolar (BJT) NPN Epitaxial Transistor
【Fairchild Semiconductor】KSC900LBU,TRANSISTOR NPN 25V 50MA TO-92