| 描述 | Transistors Bipolar (BJT) NPN Epitaxial Transistor | 直流集电极/Base Gain hfe Min | 120 at 50 mA at 1 V |
|---|---|---|---|
| 配置 | Single | 最大工作温度 | + 150 C |
| 安装风格 | Through Hole | 封装 / 箱体 | TO-92 |
| 封装 | Ammo | 最小工作温度 | - 55 C |
| 功率耗散 | 0.4 W |
【Fairchild Semiconductor】KSD261CGBU,TRANSISTOR NPN 20V 500MA TO-92
【Fairchild Semiconductor】KSD261CGTA,TRANSISTOR NPN 20V 500MA TO-92
【Fairchild Semiconductor】KSD261CGTA_Q,Transistors Bipolar (BJT) NPN Epitaxial Transistor
【Fairchild Semiconductor】KSD261COBU,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSD261CYBU,TRANSISTOR NPN 20V 500MA TO-92
【Fairchild Semiconductor】KSD261CYTA,TRANSISTOR NPN 20V 500MA TO-92