| 描述 | Transistors Bipolar (BJT) | 直流集电极/Base Gain hfe Min | 8 |
|---|---|---|---|
| 最大工作频率 | 4 MHz | 最大工作温度 | + 150 C |
| 安装风格 | Through Hole | 封装 / 箱体 | TO-220 |
| 封装 | Rail | 功率耗散 | 100000 mW |
【Fairchild Semiconductor】KSE13009F,Transistors Bipolar (BJT) DISC BY MFG 2/02
【Fairchild Semiconductor】KSE13009FTU,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSE13009H2,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSE13009H2TU,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSE13009H3,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSE13009H3TU,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSE13009LTU,Transistors Bipolar (BJT)