| 描述 | Transistors Darlington NPN Si Transistor Epitaxial Darlington | 最大集电极截止电流 | 0.1 uA |
|---|---|---|---|
| 功率耗散 | 625 mW | 最大工作温度 | + 150 C |
| 安装风格 | Through Hole | 封装 / 箱体 | TO-92 |
| 封装 | Bulk | 直流集电极/Base Gain hfe Min | 20000 |
【Fairchild Semiconductor】KSP12TA,TRANSISTOR DARL NPN 20V TO-92
【Rectron】KSP13,Transistors Darlington TO92,NPN,0.5A,30V Darlington
【Fairchild Semiconductor】KSP13BU,TRANS DARL NPN 30V 500MA TO-92
【Fairchild Semiconductor】KSP13BU_Q,Transistors Darlington NPN Si Transistor Epitaxial Darlington
【Fairchild Semiconductor】KSP13TA,TRANS DARL NPN 30V 500MA TO-92
【Fairchild Semiconductor】KSP13TF,TRANS DARL NPN 30V 500MA TO-92
【Fairchild Semiconductor】KSP14BU,TRANS DARL NPN 30V 500MA TO-92