| 描述 | Transistors Bipolar (BJT) NPN Si Transistor Epitaxial | 直流集电极/Base Gain hfe Min | 25 at 1 mA at 10 V |
|---|---|---|---|
| 配置 | Single | 最大工作频率 | 50 MHz |
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-92 | 封装 | Bulk |
| 集电极连续电流 | 0.5 A | 最小工作温度 | - 55 C |
| 功率耗散 | 625 mW |
【Fairchild Semiconductor】KSP42ATA,Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
【Fairchild Semiconductor】KSP42BU,TRANSISTOR NPN 300V 500MA TO-92
【Fairchild Semiconductor】KSP42IUTA,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSP42TA,TRANSISTOR NPN 300V 0.5A TO-92
【Fairchild Semiconductor】KSP42TA_Q,Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
【Fairchild Semiconductor】KSP42TAM,Transistors Bipolar (BJT) DISC BY MFG 2/02
【Fairchild Semiconductor】KSP42TWTA,Transistors Bipolar (BJT) TO-92
【Fairchild Semiconductor】KSP43BU,TRANSISTOR NPN 200V 500MA TO-92