| 描述 | Transistors Bipolar (BJT) PNP Si Transistor Epitaxial | 直流集电极/Base Gain hfe Min | 25 at 1 mA at 10 V |
|---|---|---|---|
| 配置 | Single | 最大工作频率 | 50 MHz |
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-92 | 封装 | Ammo |
| 集电极连续电流 | - 0.5 A | 最小工作温度 | - 55 C |
| 功率耗散 | 625 mW |
【Fairchild Semiconductor】KSP92BU,TRANSISTOR PNP 300V 500MA TO-92
【Fairchild Semiconductor】KSP92H1TA,Transistors Bipolar (BJT) TO-92
【Fairchild Semiconductor】KSP92TA,TRANSISTOR PNP 300V 0.5A TO-92
【Fairchild Semiconductor】KSP92TA_Q,Transistors Bipolar (BJT) PNP Si Transistor Epitaxial
【Fairchild Semiconductor】KSP92TAM,Transistors Bipolar (BJT) DISC BY MFG 2/02
【Fairchild Semiconductor】KSP93BU,TRANSISTOR PNP 200V 500MA TO-92
【Fairchild Semiconductor】KSP93TA,TRANSISTOR PNP 200V 500MA TO-92
【Fairchild Semiconductor】KSP93TA_Q,Transistors Bipolar (BJT) PNP Si Transistor Epitaxial