| 描述 | Transistors Bipolar (BJT) PNP Gen Purpose Amp | 最大直流电集电极电流 | 0.6 A |
|---|---|---|---|
| 直流集电极/Base Gain hfe Min | 75 at 0.1 mA at 10 V | 配置 | Quad Dual Collector |
| 最大工作频率 | 250 MHz | 最大工作温度 | + 150 C |
| 安装风格 | SMD/SMT | 封装 / 箱体 | SOIC-16 |
| 封装 | Reel | 最小工作温度 | - 55 C |
| 功率耗散 | 1 W |
【ON Semiconductor】MMPQ3467,Transistors Bipolar (BJT) 1A 40V PNP
【Fairchild Semiconductor】MMPQ3904_Q,Transistors Bipolar (BJT) NPN Multi-Chip Trans General Purpose
【ON Semiconductor】MMPQ3904R1,Transistors Bipolar (BJT) 200mA 60V NPN
【ON Semiconductor】MMPQ3904R2,Transistors Bipolar (BJT) 200mA 60V NPN