| 描述 | Transistors Bipolar (BJT) PNP Transistor General Purpose | 直流集电极/Base Gain hfe Min | 30 at 50 mA at 5 V |
|---|---|---|---|
| 配置 | Single | 最大工作频率 | 100 MHz |
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-92 | 封装 | Bulk |
| 最小工作温度 | - 55 C | 功率耗散 | 625 mW |
【Central Semiconductor】MPS3704,Transistors Bipolar (BJT) NPN Gen Pur SW
【Central Semiconductor】MPS3704 LEADFREE,双极小信号 NPN Gen Pur SW
【Central Semiconductor】MPS3706,Transistors Bipolar (BJT) NPN Gen Pur SS
【Central Semiconductor】MPS3706 LEADFREE,Transistors Bipolar (BJT) NPN Gen Pur SS sistors
【Central Semiconductor】MPS3706 LEDFREE,双极小信号 NPN Gen Pur SS sistors
【Central Semiconductor】MPS3707,Transistors Bipolar (BJT) NPN Gen Pur SS
【Central Semiconductor】MPS3708,Transistors Bipolar (BJT) NPN Gen Pur SS
【Central Semiconductor】MPS3710,Transistors Bipolar (BJT) NPN Gen Pur SS