| 描述 | Transistors Bipolar (BJT) NPN Transistor Medium Power | 直流集电极/Base Gain hfe Min | 250 at 2 mA at 10 V |
|---|---|---|---|
| 配置 | Single | 最大工作温度 | + 150 C |
| 安装风格 | Through Hole | 封装 / 箱体 | TO-92 |
| 封装 | Bulk | 集电极连续电流 | 0.2 A |
| 最小工作温度 | - 55 C | 功率耗散 | 625 mW |
【Central Semiconductor】MPS6517,Transistors Bipolar (BJT) PNP Gen Pur SS
【Central Semiconductor】MPS6517 LEDFREE,Transistors Bipolar (BJT) PNP Gen Pur SS sistors
【Fairchild Semiconductor】MPS6518,TRANSISTOR PNP GEN PURP TO-92
【Fairchild Semiconductor】MPS6518_Q,Transistors Bipolar (BJT) NPN Transistor Medium Power
【Central Semiconductor】MPS6519,Transistors Bipolar (BJT) PNP Gen Pur SS
【Central Semiconductor】MPS6519 LEADFREE,双极小信号 PNP Gen Pur SS
