| 描述 | Transistors Bipolar (BJT) PNP Transistor General Purpose | 直流集电极/Base Gain hfe Min | 60 at 10 mA at 1 V |
|---|---|---|---|
| 配置 | Single | 最大工作温度 | + 150 C |
| 安装风格 | Through Hole | 封装 / 箱体 | TO-92 |
| 封装 | Bulk | 集电极连续电流 | 0.8 A |
| 最小工作温度 | - 55 C | 功率耗散 | 625 mW |
【ROHM Semiconductor】MPS6534T93,Transistors Bipolar (BJT) PNP
【Central Semiconductor】MPS6535,Transistors Bipolar (BJT) PNP Gen Pur SS
【Central Semiconductor】MPS6560,Transistors Bipolar (BJT) NPN Med Pwr
【Central Semiconductor】MPS6561,Transistors Bipolar (BJT) NPN Med Pwr
【Fairchild Semiconductor】MPS6562,TRANSISTOR PNP GEN PURP TO-92