描述 | 射频MOSFET电源晶体管 HV8 2.1GHZ 100W | 输出功率 | 24 W |
---|---|---|---|
汲极/源极击穿电压 | 65 V | 闸/源击穿电压 | 10 V |
最大工作温度 | + 150 C | 封装 / 箱体 | NI-780S |
安装风格 | SMD/SMT |
【Freescale Semiconductor】MRF8S21120HR3,FET RF N-CH 2.1GHZ 28V NI780H
【Freescale Semiconductor】MRF8S21120HR5,FET RF N-CH 2.1GHZ 28V NI780H
【Freescale Semiconductor】MRF8S21120HSR3,FET RF N-CH 2.1GHZ 28V NI780HS
【Freescale Semiconductor】MRF8S21120HSR5,FET RF N-CH 2.1GHZ 28V NI780HS
【Freescale Semiconductor】MRF8S21140HR3,FET RF N-CH 2GHZ 28V NI780
【Freescale Semiconductor】MRF8S21140HR5,FET RF N-CH 2GHZ 28V NI780
【Freescale Semiconductor】MRF8S21140HSR3,FET RF N-CH 2GHZ 28V NI780S
【Freescale Semiconductor】MRF8S21140HSR5,FET RF N-CH 2GHZ 28V NI780S