| 描述 | Transistors Switching (Resistor Biased) 100mA 50V BRT Dual | 典型电阻器比率 | 1 |
|---|---|---|---|
| 安装风格 | SMD/SMT | 封装 / 箱体 | SC-88-6 |
| 集电极—发射极最大电压 VCEO | 50 V | 集电极连续电流 | - 0.1 A |
| 峰值直流集电极电流 | 100 mA | 功率耗散 | 250 mW |
| 最大工作温度 | + 150 C | 封装 | Tube |
| 最小工作温度 | - 55 C | 工厂包装数量 | 3000 |
【ON Semiconductor】MUN5112DW1T1G,TRANS BRT PNP DUAL 50V SOT-363
【ON Semiconductor】MUN5112T1,Transistors Switching (Resistor Biased) 100mA 50V BRT PNP
【ON Semiconductor】MUN5112T1G,TRANS BRT PNP 100MA 50V SOT-323
【ON Semiconductor】MUN5113DW1T1,Transistors Switching (Resistor Biased) 100mA 50V BRT Dual
【ON Semiconductor】MUN5113DW1T1G,TRANS BRT PNP DUAL 50V SOT-363
【ON Semiconductor】MUN5113T1G,TRANS BRT PNP 100MA 50V SOT-323
【ON Semiconductor】MUN5113T3,Transistors Switching (Resistor Biased) 100mA 50V BRT PNP